Characterization of structure and defects in dot-in-well laser structures
Author:
Publisher
Elsevier BV
Subject
Biomaterials,Bioengineering,Mechanics of Materials
Reference14 articles.
1. Efficient high-temperature CW lasing operation of oxide-confined long-wavelength InAs quantum dot lasers
2. Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser
3. Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well
4. The formation mechanism of planar defects in compound semiconductors grown epitaxially on {100} silicon substrates
5. Generation of misfit dislocations in GaAs grown on Si
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Review of Quantum Dot-in-a-Well Infrared Photodetectors and Prospect of New Structures;Journal of Nanoscience and Nanotechnology;2016-08-01
2. Effect of InAlGaAs and GaAs Combination Barrier Thickness on the Duration of Dot Formation in Different Layers of Stacked InAs/GaAs Quantum Dot Heterostructure Grown by MBE;Journal of Nanoscience and Nanotechnology;2010-08-01
3. Engineering of 3D self-directed quantum dot ordering in multilayer InGaAs/GaAs nanostructures by means of flux gas composition;Nanotechnology;2008-11-25
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