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Engineering of 3D self-directed quantum dot ordering in multilayer InGaAs/GaAs nanostructures by means of flux gas composition

  • Published:2008-11-25 Issue:50 Volume:19 Page:505605
  • ISSN:0957-4484
  • Container-title:Nanotechnology
  • language:
  • Short-container-title:Nanotechnology

Author:

Lytvyn P M,Mazur Yu I,Marega Jr E,Dorogan V G,Kladko V P,Slobodian M V,Strelchuk V V,Hussein M L,Ware M E,Salamo G J

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron levels of defects in In(Ga)As/(In)GaAs nanostructures: A review;Semiconductor Physics, Quantum Electronics and Optoelectronics;2024-06-21

2. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains;Journal of Applied Physics;2014-11-21

3. Scanning Probe Microscopy in Practical Diagnostic: 3D Topography Imaging and Nanometrology;Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting;2014

4. Enhancement of Optical Anisotropy by Interconnection Effect along Growth Direction in Multistacked Quantum Dots;Japanese Journal of Applied Physics;2013-01-01

5. Carrier transfer in the optical recombination of quantum dots;Physical Review B;2011-05-09
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