Improvement in the crystalline quality of heteroepitaxial GaAs on Si films grown by modulated molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101018
Reference9 articles.
1. Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy
2. Migration-Enhanced Epitaxy of GaAs and AlGaAs
3. New approach to growth of high‐quality GaAs layers on Si substrates
4. Initial Growth Conditions of GaAs on (100) Si Grown by Migration-Enhanced Epitaxy
5. Growth and characterization of GaAs layers on Si substrates by migration‐enhanced molecular beam epitaxy
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1. Evolution of In‐based compound semiconductor quantum dots on Si (001);physica status solidi (c);2003-06-18
2. Low Temperature Growth of GaAs on Si Substrate by Chemical Beam Epitaxy;Japanese Journal of Applied Physics;2000-04-15
3. Atomic layer epitaxial predeposition for GaAs growth on Si;Applied Physics Letters;1996-06-17
4. Improved materials for MOVPE growth of GaSb and InSb;Semiconductor Science and Technology;1993-10-01
5. Toward Cointegration of Optical Interconnections within Silicon Microelectronic Systems;Journal of Parallel and Distributed Computing;1993-03
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