Metal-oxide-high-k-oxide-silicon memory structure using an Yb2O3 charge trapping layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3021360
Reference10 articles.
1. Long-Term Electron Leakage Mechanisms Through ONO Interpoly Dielectric in Stacked-Gate EEPROM Cells
2. A novel high-/spl kappa/ SONOS memory using TaN/Al/sub 2/O/sub 3//Ta/sub 2/O/sub 5//HfO/sub 2//Si structure for fast speed and long retention operation
3. Extraction of nitride trap density from stress induced leakage current in silicon-oxide-nitride-oxide-silicon flash memory
4. Performance and Reliability Features of Advanced Nonvolatile Memories Based on Discrete Traps (Silicon Nanocrystals, SONOS)
5. The Impact of Deep Ni Salicidation and$hboxNH_3$Plasma Treatment on Nano-SOI FinFETs
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1. Non-volatile memory application of glancing angle deposition synthesized Er2O3 capped SnO2 nanostructures;Semiconductor Science and Technology;2020-04-09
2. Modulation of the microstructure, optical and electrical properties of sputtering-driven Yb2O3 gate dielectrics by sputtering power and annealing treatment;Applied Surface Science;2020-04
3. Study of γ-ray radiation influence on SiO2/HfO2/Al2O3/HfO2/Al2O3 memory capacitor by C–V and DLTS;Journal of Materials Science: Materials in Electronics;2019-05-08
4. Non-volatile memory property of $${\text{Er}}_{2}{\text{O}}_{3}$$ Er 2 O 3 doped $${\text{Sn}}{\text{O}}_{2}$$ Sn O 2 nanowires synthesized using GLAD technique;Journal of Materials Science: Materials in Electronics;2019-03-20
5. Total Ionization Dose Effects on Charge-Trapping Memory With Al2O3/HfO2/Al2O3Trilayer Structure;IEEE Transactions on Nuclear Science;2018-01
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