Extraction of nitride trap density from stress induced leakage current in silicon-oxide-nitride-oxide-silicon flash memory-Reference-Cited by-同舟云学术

Extraction of nitride trap density from stress induced leakage current in silicon-oxide-nitride-oxide-silicon flash memory

Published:2006-10-16 Issue:16 Volume:89 Page:163514
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Gu Shaw-Hung,Wang Tahui,Lu Wen-Pin,Ku Yen-Hui Joseph,Lu Chih-Yuan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2360180

Reference9 articles.

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3. Properties of MNOS structures

4. Observation of near-interface oxide traps with the charge-pumping technique

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