Time‐dependent response of interface states in indium phosphide metal–insulator–semiconductor capacitors investigated with constant‐capacitance deep‐level transient spectroscopy-Reference-Cited by-同舟云学术

Time‐dependent response of interface states in indium phosphide metal–insulator–semiconductor capacitors investigated with constant‐capacitance deep‐level transient spectroscopy

Published:1983-07 Issue:7 Volume:54 Page:4014-4021
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

van Staa P.,Rombach H.,Kassing R.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.332582

Reference14 articles.

1. Interface properties of anodically oxidized GaAs MIS capacitors

2. A microwave InP/SiO2MISFET

3. Power gain and noise of InP and GaAs insulated gate microwave FETs

4. InP/Al2O3n-channel inversion-mode m.i.s.f.e.t.s using sulphur-diffused source and drain

5. Slow Current-Drift Mechanism in n-Channel Inversion Type InP-MISFET

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