Power gain and noise of InP and GaAs insulated gate microwave FETs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. Gallium arsenide MOS transistors
2. Electrical Characteristics of the Silicon Nitride-Gallium Arsenide Interface
3. Improved method of anodic oxidation of GaAs
4. The Mos/InP interface
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