Improved method of anodic oxidation of GaAs-Reference-Cited by-同舟云学术

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Improved method of anodic oxidation of GaAs

Published:1975 Issue:3 Volume:11 Page:53
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Hasegawa H.,Forward K.E.,Hartnagel H.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19750041?crawler=true&mimetype=application/pdf

Reference6 articles.

1. Forward, K.E., Hasegawa, H., and Hartnagel, H.: (to be published)

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1. Rapid thermal annealing of reactive sputtered tantalum oxide films on GaAs in N2O atmosphere;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1998-07

2. Hydrophobicity of a Hydrochloric‐Treated GaAs Surface Analyzed by Contact Angle Measurement;Journal of The Electrochemical Society;1998-04-01

3. Coupled-cavity resonant photodetectors for high-performance wavelength demultiplexing applications;Applied Physics Letters;1997-07-14

4. Resonant-cavity InGaAs/InAlGaAs/InP photodetector arrays for wavelength demultiplexing applications;Applied Physics Letters;1997-05-05

5. Optical and structural properties of anodized AlxGa1 − xAs layers;Materials Science and Engineering: B;1997-02

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