Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism-Reference-Cited by-同舟云学术

Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism

Published:2014-11-10 Issue:19 Volume:105 Page:193502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Yiren¹,Song Hang¹,Jiang Hong¹,Li Zhiming¹,Zhang Zhiwei¹,Sun Xiaojuan¹,Li Dabing¹,Miao Guoqing¹

Affiliation:

1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China

Funder

National Basic Research Program of China

National High-Tech R&D Program (863 Program)

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4901747

Reference34 articles.

1. Who Wins the Nonvolatile Memory Race?

2. Nanoionics-based resistive switching memories

3. Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory

4. Regenerable Resistive Switching in Silicon Oxide Based Nanojunctions

5. High-brightness polarized light-emitting diodes

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