Measurement of intrinsic stresses during growth of aluminum nitride thin films by reactive sputter deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354701
Reference17 articles.
1. Luminescence in GaN
2. Luminescence in GaN
3. Lattice and thermal misfit dislocations in epitaxialCaF2/Si(111) andBaF2-CaF2/Si(111) structures
4. Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon
5. Dielectric Properties of Reactively Sputtered Films of Aluminum Nitride
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