Lattice and thermal misfit dislocations in epitaxialCaF2/Si(111) andBaF2-CaF2/Si(111) structures-Reference-Cited by-同舟云学术

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Lattice and thermal misfit dislocations in epitaxialCaF2/Si(111) andBaF2-CaF2/Si(111) structures

Published:1992-06-15 Issue:24 Volume:68 Page:3599-3602
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Blunier S.,Zogg H.,Maissen C.,Tiwari A. N.,Overney R. M.,Haefke H.,Buffat P. A.,Kostorz G.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.68.3599/fulltext

Reference22 articles.

1. Growth and characterization of single crystal insulators on silicon

2. Growth of high quality epitaxial PbSe onto Si using a (Ca,Ba)F2buffer layer

3. Infrared sensor arrays with 3-12 mu m cutoff wavelengths in heteroepitaxial narrow-gap semiconductors on silicon substrates

4. Structure of the Si(111)-CaF2Interface

5. Evidence for the influence of interfacial atomic structure on electrical properties at the epitaxialCaF2/Si(111) interface

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5. Misfit accommodation mechanism at the heterointerface between diamond and cubic boron nitride;Nature Communications;2015-02-17

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