Evidence for the influence of interfacial atomic structure on electrical properties at the epitaxialCaF2/Si(111) interface
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.60.1394/fulltext
Reference18 articles.
1. Growth and Characterization of Epitaxial Insulating CaF2ON Si
2. Heteroepitaxy of Si, Ge, and GaAs Films on CaF2/Si Structures
3. Molecular beam epitaxy growth and applications of epitaxial fluoride films
4. Fabrication of metal‐epitaxial insulator‐semiconductor field‐effect transistors using molecular beam epitaxy of CaF2on Si
5. Photoemission study of bonding at theCaF2-on-Si(111) interface
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