Bistability and metastability of oxygen vacancies in amorphous Al2O3: A possible origin of resistance switching mechanism
Author:
Affiliation:
1. Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
2. National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0021627
Reference52 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. High-K materials and metal gates for CMOS applications
3. Recent Advances and Future Prospects in Functional-Oxide Nanoelectronics: The Emerging Materials and Novel Functionalities that are Accelerating Semiconductor Device Research and Development
4. First-principles calculations of intrinsic defects inAl2O3
5. Native point defects and dangling bonds in α-Al2O3
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. On the Structure of Oxygen Deficient Amorphous Oxide Films;Advanced Science;2023-12-26
2. Unique Atomic and Electronic Structures of Oxygen Vacancies in Amorphous SnO2 from First Principles and Informatics;The Journal of Physical Chemistry C;2022-11-01
3. Aluminum Frenkel defects cause hysteresis in Al2O3/AlGaN capacitors;Journal of Applied Physics;2022-10-28
4. The electrons' journey in thick metal oxides;Applied Physics Letters;2022-07-04
5. Atomic Defects Profiling and Reliability of Amorphous Al2O3 Metal–Insulator–Metal Stacks;IEEE Transactions on Electron Devices;2022-07
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3