Atomic Defects Profiling and Reliability of Amorphous Al2O3 Metal–Insulator–Metal Stacks

Author:

Torraca P. La1ORCID,Caruso F.2ORCID,Padovani A.3ORCID,Tallarida G.2ORCID,Spiga S.2ORCID,Larcher L.2ORCID

Affiliation:

1. Department of Sciences and Methods for Engineering, University of Modena and Reggio Emilia, Reggio Emilia, Italy

2. CNR-Institute for Microelectronics and Microsystems (CNR-IMM), Unit of Agrate Brianza, Agrate Brianza, Italy

3. Applied Materials-MDLx Italy Research and Development, Reggio Emilia, Italy

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

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2. Characterization and Multiscale Modeling of TDDB in State-of-the-art BEOL;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

3. The Role of Carrier Injection in the Breakdown Mechanism of Amorphous Al2O3 Layers;IEEE Electron Device Letters;2024-02

4. A Multiscale-Multiphysics simulation platform for technology virtualization: from process chamber modeling to device electrical prediction;2023 IEEE Nanotechnology Materials and Devices Conference (NMDC);2023-10-22

5. Electrically active defects in Al2O3-InGaAs MOS stacks at cryogenic temperatures;2023 IEEE International Integrated Reliability Workshop (IIRW);2023-10-08

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