The Role of Carrier Injection in the Breakdown Mechanism of Amorphous Al<sub>2</sub>O<sub>3</sub> Layers-Reference-Cited by-同舟云学术

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The Role of Carrier Injection in the Breakdown Mechanism of Amorphous Al₂O₃ Layers

Published:2024-02 Issue:2 Volume:45 Page:236-239
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

La Torraca P.¹^ORCID,Padovani A.²^ORCID,Strand J.³,Shluger A.³,Larcher L.⁴^ORCID

Affiliation:

1. Department of Science and Methods for Engineering, University of Modena and Reggio Emilia, Reggio Emilia, Italy

2. Engineering Department “Enzo Ferrari,”, University of Modena and Reggio Emilia, Reggio Emilia, Italy

3. Department of Physics and Astronomy, University College London, London, U.K.

4. Applied Materials–MDLx Italy Research and Development, eggio Emilia, Italy

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10415514/10335679.pdf?arnumber=10335679

Reference25 articles.

1. 59.9 mV·dec Subthreshold Swing Achieved in Zinc Tin Oxide TFTs With In Situ Atomic Layer Deposited AlO Gate Insulator

2. Origin of High Current and Illumination Stress Instability in Self-Aligned a-InGaZnO Thin Film Transistors With Al2O3 as High-κ Gate Dielectric

3. High-Voltage Amorphous InGaZnO TFT With Al2O3High- $k$ Dielectric for Low-Temperature Monolithic 3-D Integration

4. MIM Capacitors Using ALD Al2O3 for RF IC and DRAM Applications

5. Investigation of ultrathin Pt/ZrO 2 –Al 2 O 3 –ZrO 2 /TiN DRAM capacitors Schottky barrier height by internal photoemission spectroscopy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dielectric breakdown of oxide films in electronic devices;Nature Reviews Materials;2024-08-07

2. From Accelerated to Operating Conditions: How Trapped Charge Impacts on TDDB in SiO₂ and HfO₂ Stacks;IEEE Transactions on Device and Materials Reliability;2024-06

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