Unique Atomic and Electronic Structures of Oxygen Vacancies in Amorphous SnO<sub>2</sub> from First Principles and Informatics-Reference-Cited by-同舟云学术

Unique Atomic and Electronic Structures of Oxygen Vacancies in Amorphous SnO₂ from First Principles and Informatics

Published:2022-11-01 Issue:44 Volume:126 Page:18833-18838
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Kiyohara Shin¹^ORCID,Mora-Fonz David²^ORCID,Shluger Alexander²,Kumagai Yu¹,Oba Fumiyasu¹³^ORCID

Affiliation:

1. Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama226-8503, Japan

2. London Centre for Nanotechnology and Department of Physics and Astronomy, University College London, LondonWC1E 6BT, United Kingdom

3. Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama226-8503, Japan

Funder

Engineering and Physical Sciences Research Council

Ministry of Education, Culture, Sports, Science and Technology

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.2c04764

Reference48 articles.

1. Prediction of the chemical trends of oxygen vacancy levels in binary metal oxides

2. Deep vs shallow nature of oxygen vacancies and consequentn-type carrier concentrations in transparent conducting oxides

3. A Unifying Perspective on Oxygen Vacancies in Wide Band Gap Oxides

4. Quantitative theory of the oxygen vacancy and carrier self-trapping in bulk TiO2

5. Stabilization of small polarons in BaTiO3 by local distortions

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