The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing
Author:
Funder
NNSFC
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4867091
Reference16 articles.
1. Investigation of GaN Films Grown on Liquid-Phase Deposited SiO2Nanopatterned Sapphire Substrates
2. III-nitride photonic-crystal light-emitting diodes with high extraction efficiency
3. Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands
4. Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template
5. Pattern Design of and Epitaxial Growth on Patterned Sapphire Substrates for Highly Efficient GaN-Based LEDs
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1. Impacts of specific element-treated three-dimensional GaN layer on characteristics of nonpolar a-plane GaN film;Journal of Vacuum Science & Technology A;2023-08-10
2. Suppressing optical crosstalk for GaN/InGaN based flip-chip micro light-emitting diodes by using an air-cavity patterned sapphire substrate as a light filter;Optics Express;2023-01-11
3. Light Extraction Efficiency Enhancement in GaN ‐Based LEDs by Colloidal Self‐assembly;Functional Materials from Colloidal Self‐Assembly;2022-01-14
4. Application of patterned sapphire substrate for III-nitride light-emitting diodes;Nanoscale;2022
5. Different scattering effect of nano-patterned sapphire substrate for TM- and TE-polarized light emitted from AlGaN-based deep ultraviolet light-emitting diodes;Optical Materials Express;2021-02-10
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