Different scattering effect of nano-patterned sapphire substrate for TM- and TE-polarized light emitted from AlGaN-based deep ultraviolet light-emitting diodes-Reference-Cited by-同舟云学术

Different scattering effect of nano-patterned sapphire substrate for TM- and TE-polarized light emitted from AlGaN-based deep ultraviolet light-emitting diodes

Published:2021-02-10 Issue:3 Volume:11 Page:729
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Zhang Ji,Chang Le,Zhao Ziqiang,Tian Kangkai,Chu Chunshuang,Zheng Quan,Zhang Yonghui^ORCID,Li Qing,Zhang Zi-Hui^ORCID

Funder

Hebei University of Technology

National Natural Science Foundation of China

Natural Science Foundation of Hebei Province

research fund by State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference40 articles.

1. AlGaN photonics: recent advances in materials and ultraviolet devices

2. The emergence and prospects of deep-ultraviolet light-emitting diode technologies

3. High quality GaN buffer layer by isoelectronic doping and its application to 365 nm InGaN/AlGaN ultraviolet light-emitting diodes

4. Advances in group III-nitride-based deep UV light-emitting diode technology

5. Analysis of TM mode light extraction efficiency enhancement for deep ultraviolet AlGaN quantum wells light-emitting diodes with III-nitride micro-domes

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