Analysis of TM mode light extraction efficiency enhancement for deep ultraviolet AlGaN quantum wells light-emitting diodes with III-nitride micro-domes-Reference-Cited by-同舟云学术

Analysis of TM mode light extraction efficiency enhancement for deep ultraviolet AlGaN quantum wells light-emitting diodes with III-nitride micro-domes

Published:2012-09-18 Issue:10 Volume:2 Page:1397
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Zhao Peng,Han Lu,McGoogan Matthew R.,Zhao Hongping

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference30 articles.

1. 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire

2. AlGaN multiple quantum well based deep UV LEDs and their applications

3. Growth and design of deep-UV (240–290nm) light emitting diodes using AlGaN alloys

4. 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

5. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

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