Silicon surface cleaning by low dose argon‐ion bombardment for low‐temperature (750 °C) epitaxial deposition. II. Epitaxial quality
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339302
Reference18 articles.
1. Dependence of residual damage on temperature during Ar+sputter cleaning of silicon
2. Silicon surface cleaning by low dose argon‐ion bombardment for low‐temperature (750 °C) epitaxial silicon deposition. I. Process considerations
3. A review of the present understanding of the role of ion/surface interactions and photo-induced reactions during vapor-phase crystal growth
4. Cleaning of Si and GaAs Crystal Surfaces by Ion Bombardment in the 50–1500 eV Range: Influence of Bombarding Energy and Sample Temperature on Damage and Incorporation
5. Residual damage to an atomically cleaned low‐temperature‐annealed Si(100) surface
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1. Investigation of thin oxide layer removal from Si substrates using an SiO2atomic layer etching approach: the importance of the reactivity of the substrate;Journal of Physics D: Applied Physics;2017-06-06
2. Mechanisms controlling the phase and dislocation density in epitaxial silicon films grown from silane below 800 °C;Applied Physics Letters;2010-05-17
3. Plasmas in Deposition Processes;Handbook of Deposition Technologies for Films and Coatings;2010
4. Instantaneous cleaning of silicon substrates by mesoplasma for high-rate and low-temperature epitaxy;Thin Solid Films;2009-12
5. Spectroscopic second-harmonic generation duringAr+-ion bombardment of Si(100);Physical Review B;2006-10-10
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