Cleaning of Si and GaAs Crystal Surfaces by Ion Bombardment in the 50–1500 eV Range: Influence of Bombarding Energy and Sample Temperature on Damage and Incorporation-Reference-Cited by-同舟云学术

Cleaning of Si and GaAs Crystal Surfaces by Ion Bombardment in the 50–1500 eV Range: Influence of Bombarding Energy and Sample Temperature on Damage and Incorporation

Published:1984-04-01 Issue:4 Volume:131 Page:905-914
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Rabinzohn P.¹²,Gautherin G.¹²,Agius B.¹²,Cohen C.¹²

Affiliation:

1. Institut d'Electronique Fondamentale, Université Paris XI, 91405 Orsay‐Cédex, France

2. Groupe de Physique des Solides, ENS, Université Paris VII , 75221 Paris‐Cédex 05, France

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2115726/pdf

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