Kinetic suppression of islanding in impurity‐mediated heteroepitaxial growth of germanium on silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111613
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1. Surfactant-mediated Stranski-Krastanov islands;physica status solidi (b);2013-05-13
2. Evolution of surface roughness in epitaxial Si0.7Ge0.3(001) as a function of growth temperature (200–600 °C) and Si(001) substrate miscut;Journal of Applied Physics;1996-08-15
3. Supersaturated carbon in silicon and silicon/germanium alloys;Materials Science and Engineering: B;1996-01
4. Growth Processes in Strained-Layer MBE;Molecular Beam Epitaxy;1996
5. Supersaturated carbon in silicon and silicon/germanium alloys;C,H,N and O in Si and Characterization and Simulation of Materials and Processes;1996
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