Growth Processes in Strained-Layer MBE

Author:

Herman Marian A.,Sitter Helmut

Publisher

Springer Berlin Heidelberg

Reference102 articles.

1. J.W. Matthews (ed.): Epitaxial Growth, Pts. A and B (Academic, New Yorkl 1975)

2. S. Mahajan, L.C. Kimerling (eds): Concise Encyclopedia of Semiconducting Materials and Related Technologies (Pergamon, Oxford 1992)

3. J.Y. Tsao: Materials Fundamentals of Molecular Beam Epitaxy (Academic, San Diego 1993)

4. C.A.B. Ball, J.H. van der Merwe: The growth of dislocation-free layers, in Dislocations in Solids, ed. by F.R.N. Nabarro (North-Holland, Amsterdam 1983), Vol. 6, Chap. 27 K. Shintani, H. Yonezawa: J. Appl. Phys. 78, 5022 (1995) A. Sasaki: J. Cryst. Growth 160, 27 (1996) Y. Nabetani, A. Wakahara, A. Sasaki: J. Appl. Phys. 78, 6461 (1995)

5. M.J. Stowell: Defects in epitaxial deposits, in [Ref. 6.1, Chap. 5]

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