Extended wavelength InGaAs on GaAs using InAlAs buffer for back-side-illuminated short-wave infrared detectors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1569042
Reference13 articles.
1. Dark current analysis and characterization of In/sub x/Ga/sub 1-x/As/InAs/sub y/P/sub 1-y/ graded photodiodes with x<0.53 for response to longer wavelengths (<1.7 mu m)
2. Dark current optimisation for MOVPE grown 2.5 [micro sign]m wavelength InGaAs photodetectors
3. Observation of the InP surface thermally cleaned in an arsenic flux using a scanning tunneling microscope
4. Substrate preparation and interface grading in InGaAs/InAlAs photodiodes grown on InP by molecular-beam epitaxy
5. Molecular beam epitaxy growth and characterization of InxGa1 − xAs (0.57 ⩽ x ⩽ 1) on GaAs using InAlAs graded buffer
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1. Growth experiment and analysis of buffer layer of high in content InGaAs films;International Conference on Optoelectronic Information and Functional Materials (OIFM 2023);2023-08-07
2. Low Dark Current Operation in InAs/GaAs(111)A Infrared Photodetectors: Role of Misfit Dislocations at the Interface;ACS Applied Materials & Interfaces;2023-06-07
3. Chip-scale short-wavelength infrared InGaAs microspectrometer based on a linear variable optical filter;Journal of Materials Chemistry C;2023
4. Voltage-dependent extended shortwave infrared (e-SWIR) photodetection-band tuning utilizing the Moss–Burstein effect;Journal of Physics D: Applied Physics;2022-12-29
5. High-speed Ge-on-GaAs photodetector;Optics Express;2022-05-24
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