Substrate preparation and interface grading in InGaAs/InAlAs photodiodes grown on InP by molecular-beam epitaxy-Reference-Cited by-同舟云学术

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Substrate preparation and interface grading in InGaAs/InAlAs photodiodes grown on InP by molecular-beam epitaxy

Published:1999 Issue:3 Volume:17 Page:1175
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Lenox C.,Nie H.,Kinsey G.,Hansing C.,Campbell J. C.,Holmes A. L.,Streetman B. G.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2.04 μm;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004

2. Extended wavelength InGaAs on GaAs using InAlAs buffer for back-side-illuminated short-wave infrared detectors;Applied Physics Letters;2003-04-28

3. Metamorphic graded bandgap InGaAs-InGaAlAs-InAlAs double heterojunction p-i-I-n photodiodes;Journal of Lightwave Technology;2002-03

4. High direct energy band gaps determination in In[sub x]Al[sub 1−x]As coherently grown on InP;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002

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