Metamorphic graded bandgap InGaAs-InGaAlAs-InAlAs double heterojunction p-i-I-n photodiodes-Reference-Cited by-同舟云学术

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Metamorphic graded bandgap InGaAs-InGaAlAs-InAlAs double heterojunction p-i-I-n photodiodes

Published:2002-03 Issue:3 Volume:20 Page:507-514
ISSN:0733-8724
Container-title:Journal of Lightwave Technology
language:
Short-container-title:J. Lightwave Technol.

Author:

Jae-Hyung Jang ,Cueva G.,Hoke W.E.,Lemonias P.J.,Fay P.,Adesida I.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx5/50/21312/00989001.pdf?arnumber=989001

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature dependencies of the refractive index for Al-Ga-In-As metamorphic layers;Optics Letters;2021-09-29

2. The Tunable Phase Shift of High-Speed PIN Photodetector and Modified Uni-Traveling Carrier Photodetector;Journal of Lightwave Technology;2021-03-15

3. Highly Transparent and Colorless Polyimide Film with Low Dielectric Constant by Introducing Meta-substituted Structure and Trifluoromethyl Groups;Chinese Journal of Polymer Science;2020-11-10

4. Influences of contact electrode shape and incidence direction on p‐i‐n photodiodes;IET Optoelectronics;2019-08

5. Epitaxy and Device Properties of InGaAs Photodetectors with Relatively High Lattice Mismatch;Epitaxy;2018-03-07

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