Observation of {105} facetted Ge pyramids inclined towards vicinal Si(001) surfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120777
Reference8 articles.
1. Growth and characterization of self-assembled Ge-rich islands on Si
2. Photoluminescence study of the crossover from two‐dimensional to three‐dimensional growth for Ge on Si(100)
3. Photoluminescence and electroluminescence of SiGe dots fabricated by island growth
4. Growth mode transition and photoluminescence properties of Si1−xGex/Si quantum well structures with high Ge composition
5. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
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1. Simultaneous effects of hydrostatic pressure, temperature and electric field on optical absorption in InAs/GaAs lens shape quantum dot;Journal of Alloys and Compounds;2016-01
2. Heteroepitaxy of Ge on singular and vicinal Si surfaces: elastic field symmetry and nanostructure growth;Journal of Physics: Condensed Matter;2015-05-28
3. Semiconductor Quantum Dots: Model Case Ge/Si;Surface and Interface Science;2014-11-21
4. Hydrostatic pressure and temperature effects on nonlinear optical rectification in a lens shape InAs/GaAs quantum dot;Journal of Luminescence;2013-03
5. Towards a Controlled Growth of Self-assembled Nanostructures: Shaping, Ordering, and Localization in Ge/Si Heteroepitaxy;Self-Assembly of Nanostructures;2011-09-20
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