High-k shallow traps observed by charge pumping with varying discharging times-Reference-Cited by-同舟云学术

High-k shallow traps observed by charge pumping with varying discharging times

Published:2013-11-07 Issue:17 Volume:114 Page:174506
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ho Szu-Han,Chang Ting-Chang,Lu Ying-Hsin,Wang Bin-Wei,Lo Wen-Hung,Chen Ching-En,Tsai Jyun-Yu,Chen Hua-Mao,Liu Kuan-Ju,Tseng Tseung-Yuen,Cheng Osbert,Huang Cheng-Tung,Chen Tsai-Fu,Cao Xi-Xin

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4828719

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4. On the Origin of Gate-Induced Floating-Body Effect in PD SOI p-MOSFETs

5. Impact of Mechanical Strain on GIFBE in PD SOI p-MOSFETs as Indicated From NBTI Degradation

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