A characteristic improved technique and analysis with plasma treatment to the electrode on oxide-based resistive random access memory-Reference-Cited by-同舟云学术

A characteristic improved technique and analysis with plasma treatment to the electrode on oxide-based resistive random access memory

Published:2020-03 Issue: Volume:817 Page:150566
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Lin Chih-Yang,Chang Ting-Chang^ORCID,Pan Chih-Hung,Chen Min-Chen,Xu You-Lin,Tan Yung-Fang,Wu Pei-Yu,Chen Chun-Kuei,Huang Wei-Chen,Lin Yun-Hsuan,Chao Yu-Ting,Shou Cheng-Yun,Ma Xiao-Hua,Hao Yue,Sze Simon M.

Funder

Ministry of Science and Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference54 articles.

1. Twin thin-film transistor nonvolatile memory with an indium-gallium-zinc-oxide floating gate;Hung;IEEE Electron. Device Lett.,2013

2. Redox reaction switching mechanism in RRAM device with Pt/CoSiOX/TiN structure;Syu;IEEE Electron. Device Lett.,2011

3. Resistance random access memory, Mater;Chang;Today,2016

4. Cycle-to-Cycle intrinsic RESET statistics in HfO2-based unipolar RRAM devices;Long;IEEE Electron. Device Lett.,2013

5. Redox-Based resistive switching memories - nanoionic mechanisms, prospects, and challenges;Waser;Adv. Mater.,2009

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced Resistive Switching Performances of Mn-Doped BiFeO₃ Memristor by Introducing Oxygen Reservoir Interface;IEEE Transactions on Electron Devices;2023-11

2. Stabilizing resistive random access memory by constructing an oxygen reservoir with analyzed state distribution;Nanoscale;2020