Stabilizing resistive random access memory by constructing an oxygen reservoir with analyzed state distribution-Reference-Cited by-同舟云学术

Stabilizing resistive random access memory by constructing an oxygen reservoir with analyzed state distribution

Published:2020 Issue:46 Volume:12 Page:23532-23536
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Lin Chih-Yang¹²³⁴,Zhou Kuan-Ju¹²³⁴,Chang Ting-Chang¹²³⁴^ORCID,Sun Li-Chuan⁵²³⁴,Tan Yung-Fang⁵²³⁴,Wu Chung-Wei¹²³⁴,Yeh Yu-Hsuan¹²³⁴,Chen Wen-Chung⁵²³⁴,Lin Chun-Chu⁵²³⁴,Huang Wei-Chen¹²³⁴,Wu Cheng-Hsien⁵²³⁴,Lin Shih-Kai⁶⁷⁸⁴,Lin Tzu-Heng⁵²³⁴,Huang Jen-Wei¹⁹¹⁰⁴,Sze Simon M.¹¹¹²⁸⁴

Affiliation:

1. Department of Physics

2. National Sun Yat-Sen University

3. Kaohsiung 804

4. Taiwan

5. Department of Materials and Optoelectronic Science

6. Department of Electronics Engineering

7. National Tsing Hua University

8. Hsinchu 300

9. Military Academy

10. Kaohsiung 83059

11. Department of Electronics Engineering and Institute of Electronics

12. National Chiao Tung University

Abstract

In this paper, the instability mechanism of resistive random access memory was investigated, and a technique was developed to stabilize the distribution of high resistance states and better concentrate the set voltage.

Funder

Ministry of Science and Technology, Taiwan

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR04225K

Reference34 articles.

1. Resistive Random Access Memory for Future Information Processing System

2. In-memory computing with resistive switching devices

3. A review of emerging non-volatile memory (NVM) technologies and applications

4. Reviewing the Evolution of the NAND Flash Technology

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