Role and optimization of thermal rapid annealing in Ta/TaOx/Ru based resistive switching memory
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference25 articles.
1. Evidence for compliance controlled oxygen vacancy and metal filament based resistance switching mechanisms in RRAM;Raghavan;Nanotechnology,2011
2. Effect of top electrode material on resistive switching properties of WN based thin films for non volatile memory application;Prakash;J. Alloys Compd.,2017
3. Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications;Dongsoo;IEEE Electron. Device Lett.,2005
4. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures;Lee;Nat. Mater.,2011
5. Thin TiOx layer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory;Li;Nanoscale,2017
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Growth behavior and mechanism of atomic layer deposition of Ru for replacing Cu-interconnects;Vacuum;2024-03
2. Effect of rapid thermal annealing on the charge storage kinetics of conductive N-doped SnO2 thin film anodes for Li-ion batteries;Journal of Power Sources;2024-01
3. An overview of critical applications of resistive random access memory;Nanoscale Advances;2024
4. HfO2-Based RRAM with In Situ Conductive Channels Induced by Nanoparticles to Improve Stability;ACS Applied Electronic Materials;2023-12-27
5. Spinel ferrites for resistive random access memory applications;Emergent Materials;2023-11-22
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3