Enhanced gate-induced floating-body effect in PD SOI MOSFET under external mechanical strain-Reference-Cited by-同舟云学术

Enhanced gate-induced floating-body effect in PD SOI MOSFET under external mechanical strain

Published:2010-11 Issue:5 Volume:205 Page:1470-1474
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Dai Chih-Hao,Chang Ting-Chang,Chu Ann-Kuo,Kuo Yuan-Jui,Chen Shih-Ching,Tsai Chih-Tsung,Lo Wen-Hung,Ho Szu-Han,Xia Guangrui,Cheng Osbert,Huang Cheng Tung

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference13 articles.

1. Increased drain saturation current in ultra-thin silicon-on-insulator (SOI) MOS transistors

2. Stealer M;Ghani,2000

3. Opposing dependence of the electron and hole gate currents in SOI MOSFETs under uniaxial strain

4. "Linear kink effect" induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETs

5. Study of the linear kink effect in PD SOI nMOSFETs

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Oxygen diffusion barrier on interfacial layer formed with remote NH3 plasma treatment;Surface and Coatings Technology;2021-10

2. Investigation of defect-induced abnormal body current in fin field-effect-transistors;Applied Physics Letters;2015-08-24

3. Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO2 structure using fast I-V measurement;Applied Physics Letters;2014-03-17

4. High-k shallow traps observed by charge pumping with varying discharging times;Journal of Applied Physics;2013-11-07

5. Abnormal threshold voltage shift under hot carrier stress in Ti1−xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors;Journal of Applied Physics;2013-09-28