Doping-induced type-II to type-I transition and interband optical gain in InAs/AlSb quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1605236
Reference9 articles.
1. Photoluminescence from narrow InAs‐AlSb quantum wells
2. Optical analysis of InAs heterostructures grown by migration-enhanced epitaxy
3. Spatially direct and indirect photoluminescence from InAs/AlSb heterostructures
4. Interface control in InAs/AlSb superlattices
5. InAs/AlSb quantum-cascade light-emitting devices in the 3–5 μm wavelength region
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1. Optical Response in Strained Type-II AlInAs/AlSb Ultrathin QW Heterostructure;Lecture Notes in Electrical Engineering;2022-10-05
2. Quantum Well Width Effect on Intraband Optical Absorption in Type-II InAs/AlSb Nano-Scale Heterostructure;Lecture Notes in Electrical Engineering;2018
3. Uniaxial strain induced optical properties of complex type-II InGaAs/InAs/GaAsSb nano-scale heterostructure;Optik;2017-10
4. Investigation of high optical gain in complex type-II InGaAs/InAs/GaAsSb nano-scale heterostructure for MIR applications;Applied Optics;2017-05-11
5. All-semiconductor active plasmonic system in mid-infrared wavelengths;Optics Express;2011-07-14
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