Quantum Well Width Effect on Intraband Optical Absorption in Type-II InAs/AlSb Nano-Scale Heterostructure
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Publisher
Springer Singapore
Link
http://link.springer.com/content/pdf/10.1007/978-981-10-7395-3_22
Reference8 articles.
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2. Bennett BR, Magno R, Boos JB, Kruppa W, Ancona MG (2005) Antimonide-based compound semiconductors for electronic devices: a review. Solid State Electron 49:1875
3. Klokolov KI, Ning CZ (2003) Doping induced type-II to type-I transition and interband optical gain in InAs/AlSb quantum wells. Appl Phys Lett 83(8):1581
4. Ren S-F, Shen J (1997) Ab initio pseudopotential calculations of InAs/AlSb heterostructures. J Appl Phys 81:1169
5. Alvi PA (2017) Transformation of type-II InAs/AlSb nano-scale heterostructure into type-I structure and improving interband optical gain. Phys Status Solidi B. https://doi.org/10.1002/pssb.201600572
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1. Optical absorption in lateral transition metal dichalcogenide quantum wells;The European Physical Journal B;2022-10
2. Numerical simulation of optical properties of compressively strained grin- InGaAlAs/InP type-I nano-heterostructure;Materials Today: Proceedings;2021
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