Photoluminescence from narrow InAs‐AlSb quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109053
Reference9 articles.
1. Effects of barrier thicknesses on the electron concentration in not-intentionally doped InAs–AlSb quantum wells
2. Surface donor contribution to electron sheet concentrations in not‐intentionally doped InAs‐AlSb quantum wells
3. Are there Tamm-state donors at the InAs–AlSb quantum well interface?
4. Interface roughness scattering in InAs/AlSb quantum wells
5. Growth of InAs-AlSb quantum wells having both high mobilities and high concentrations
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2. Transformation of type-II InAs/AlSb nanoscale heterostructure into type-I structure and improving interband optical gain;physica status solidi (b);2017-01-04
3. Scalable GaSb/InAs Tunnel FETs With Nonuniform Body Thickness;IEEE Transactions on Electron Devices;2017-01
4. Doping-induced type-II to type-I transition and mid-IR optical gain in InAs/AlSb quantum wells;SPIE Proceedings;2004-05-11
5. Doping-induced type-II to type-I transition and interband optical gain in InAs/AlSb quantum wells;Applied Physics Letters;2003-08-25
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