Spatially direct and indirect photoluminescence from InAs/AlSb heterostructures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.49.13638/fulltext
Reference20 articles.
1. Electrical properties and band offsets of InAs/AlSbn‐Nisotype heterojunctions grown on GaAs
2. Are there Tamm-state donors at the InAs–AlSb quantum well interface?
3. Semiconductor heterojunctions at the Conference on the Physics and Chemistry of Semiconductor Interfaces: A device physicist’s perspective
4. Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interface
5. Surface donor contribution to electron sheet concentrations in not‐intentionally doped InAs‐AlSb quantum wells
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