Redistribution of dopant arsenic during silicide formation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336084
Reference16 articles.
1. The redistribution of implanted dopants after metal‐silicide formation
2. Redistribution of As during Pd2Si formation: Ion channeling measurements
3. Low-temperature diffusion of dopant atoms in silicon during interfacial silicide formation
4. Low‐temperature redistribution of As in Si during Pd2Si formation
5. Low‐temperature redistribution of As in Si during Ni silicide formation
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