Analytical electron microscopy investigation of elemental composition and bonding structure at the Sb-doped Ni-fully-silicide/SiO2 interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3561370
Reference17 articles.
1. Fully Silicided Metal Gates for High-Performance CMOS Technology: A Review
2. Modulation of the effective work function of fully-silicided (FUSI) gate stacks
3. Investigation of work function adjustments by electric dipole formation at the gate/oxide interface in preimplanted NiSi fully silicided metal gates
4. Transistors with dual work function metal gates by single full silicidation (FUSI) of polysilicon gates
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1. Phase transition of nickel silicide compounds and their electrical properties;Journal of Materials Science: Materials in Electronics;2021-05-28
2. Kinetic study on hot-wire-assisted atomic layer deposition of nickel thin films;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2014-01
3. Characterization of Ultra-Thin Ni Silicide Film by Two-Step Low Temperature Microwave Anneal;ECS Journal of Solid State Science and Technology;2014
4. Present Stage of Sub-nanometer Analysis by Aberration-corrected Scanning Transmission Electron Microscopy;Journal of the Vacuum Society of Japan;2013
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