Low-temperature diffusion of dopant atoms in silicon during interfacial silicide formation
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.29.2010/fulltext
Reference38 articles.
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4. Ion-implanted low-barrier PtSi Schottky-barrier diodes
5. Redistribution of implanted phosphorus after platinum silicide formation and the characteristics of Schottky barrier diodes
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