Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts-Reference-Cited by-同舟云学术

Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts

Published:2017-05-28 Issue:20 Volume:121 Page:205705
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Schulte-Braucks Christian¹^ORCID,Hofmann Emily¹^ORCID,Glass Stefan¹,von den Driesch Nils¹^ORCID,Mussler Gregor¹,Breuer Uwe²,Hartmann Jean-Michel³,Zaumseil Peter⁴^ORCID,Schröder Thomas⁴⁵,Zhao Qing-Tai¹,Mantl Siegfried¹,Buca Dan¹^ORCID

Affiliation:

1. Peter Grünberg Institut (PGI 9), Forschungszentrum Jülich GmbH, Jülich 52428, Germany

2. Zentralinstitut für Engineering, Elektronik und Analytik (ZEA-3), Forschungszentrum Jülich GmbH, 52428 Jülich, Germany

3. University of Grenoble Alpes and CEA, LETI, MINATEC Campus, F-38000 Grenoble, France

4. IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

5. Brandenburgisch Technische Universität BTU, Institut für Physik, Konrad Zuse Str.1, 03046 Cottbus, Germany

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4984117

Reference44 articles.

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5. Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 $^{\circ}\hbox{C}\ \hbox{Si}_{2}\hbox{H}_{6}$ Passivation

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