Low contact resistance of NiGeSn on n-GeSn

Author:

Sun Jingxuan,Han YiORCID,Junk Yannik,Concepción OmarORCID,Bae Jin-Hee,Grützmacher Detlev,Buca Dan,Zhao Qing-Tai

Funder

Bundesministerium für Bildung und Forschung

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. GeSn Quantum Well P-Channel Tunneling FETs Fabricated on Si(001) and (111) with Improved Subthreshold Swing;Han;IEEE Electron Device Lett,2016

2. Si-Ge-Sn alloys: From growth to applications;Wirths;Prog Cryst Growth Charact Mater,2016

3. Electron Mobility Enhancement in GeSn n-Channel MOSFETs by Tensile Strain;Chuang;IEEE Electron Device Lett,2021

4. Towards high mobility GeSn channel nMOSFETs: Improved surface passivation using novel ozone oxidation method;Gupta;Tech Dig - Int Electron Devices Meet IEDM,2012

5. Vertical GeSn nanowire MOSFETs for CMOS beyond silicon;Liu;Commun Eng,2023

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