Sheet carrier density enhancement by Si3N4 passivation on nonpolar a-plane (112¯0) sapphire grown AlGaN∕GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2857479
Reference16 articles.
1. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
2. Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride
3. Effect of gate-source and gate-drain Si3N4 passivation on current collapse in AlGaN∕GaN high-electron-mobility transistors on silicon
4. Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques
5. Enhancement of electrical and structural properties of GaN layers grown on vicinal-cut, a-plane sapphire substrates
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1. Demonstration of vertically-ordered h-BN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors on Si substrate;Materials Science and Engineering: B;2021-08
2. Robustness of 650-V Enhancement-Mode GaN HEMTs Under Various Short-Circuit Conditions;IEEE Transactions on Industry Applications;2019-03
3. The Power Law of Phonon-Limited Electron Mobility in the 2-D Electron Gas of AlGaN/GaN Heterostructure;IEEE Transactions on Electron Devices;2016-05
4. PECVD Silicon Nitride Passivation of AlGaN/GaN Heterostructures;IEEE Transactions on Electron Devices;2013-03
5. Non-polar and semi-polar ammonothermal GaN substrates;Semiconductor Science and Technology;2012-01-19
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