Improved flatness in GaAs/AlGaAs heterointerfaces grown by flow‐rate modulation epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98029
Reference8 articles.
1. Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy
2. Flow-Rate Modulation Epitaxy of GaAs
3. Modulation Doped n-AlGaAs/GaAs Heterostructures Grown by Flow-rate Modulation Epitaxy
4. Photoluminescence of AlGaAs/GaAs quantum wells grown by metalorganic chemical vapor deposition
5. One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy
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2. 2DEGs formed in AlN/GaN HEMT structures with AlN grown at low temperature;Applied Physics Letters;2021-05-31
3. Flow-rate modulation epitaxy of ZnS x Se 1-x on GaAs;SPIE Proceedings;2001-10-16
4. The electrical and optical characteristics of GaAs on Si by modified flow rate modulation epitaxy;Applied Surface Science;1996-02
5. Metalorganic chemical vapor deposition of InP using phosphine modulation;Applied Physics Letters;1993-03-15
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