Nanometer-scale quantum channels defined by reactive ion etching in InAs/AlSb heterojunctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1320867
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1. Capacitance Oscillations in One-Dimensional Electron Systems
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1. Postgrowth Shaping and Transport Anisotropy in Two-Dimensional InAs Nanofins;ACS Nano;2021-04-07
2. Influence of etching processes on electronic transport in mesoscopic InAs/GaSb quantum well devices;AIP Advances;2015-07
3. Ballistic transport and boundary scattering in InSb/In1−xAlxSb mesoscopic devices;Physical Review B;2011-02-08
4. Quantum steering of electron wave function in an InAs Y-branch switch;Applied Physics Letters;2005
5. A nanofabrication scheme for InAs/AlSb heterostructures;Applied Physics Letters;2002-02-18
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