Influence of etching processes on electronic transport in mesoscopic InAs/GaSb quantum well devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/7/1.4926385.pdf?itemId=/content/aip/journal/adva/5/7/10.1063/1.4926385&mimeType=pdf&containerItemId=content/aip/journal/adva
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1. Quantum Spin Hall Effect in Inverted Type-II Semiconductors
2. Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
3. Quantum Spin Hall Insulator State in HgTe Quantum Wells
4. Finite conductivity in mesoscopic Hall bars of inverted InAs/GaSb quantum wells
5. Evidence for Helical Edge Modes in InvertedInAs/GaSbQuantum Wells
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2. Influence of Dry and Wet Etching on AlInSb Contact Resistivity, Transfer Length, and Sheet Resistance Using Circular Transmission Model;Journal of Electronic Materials;2023-01-20
3. Badanie wpływu wybranych parametrów cyklicznego procesu mokrego trawienia chemicznego epitaksjalnych warstw InAs;PRZEGLĄD ELEKTROTECHNICZNY;2022-02-04
4. Fabrication and Characterization of InAs/AlSb based Magnetic Hall Sensors;2020 5th IEEE International Conference on Emerging Electronics (ICEE);2020-11-26
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