Postgrowth Shaping and Transport Anisotropy in Two-Dimensional InAs Nanofins-Reference-Cited by-同舟云学术

Postgrowth Shaping and Transport Anisotropy in Two-Dimensional InAs Nanofins

Published:2021-04-07 Issue:4 Volume:15 Page:7226-7236
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Seidl Jakob¹,Gluschke Jan G.¹,Yuan Xiaoming²^ORCID,Tan H. Hoe²,Jagadish Chennupati²,Caroff Philippe²,Micolich Adam P.¹^ORCID

Affiliation:

1. School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia

2. ARC Centre of Excellence for Transformative Meta-Optical Systems, Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia

Funder

Australian Research Council

University of New South Wales

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.1c00483

Reference77 articles.

1. III–V compound semiconductor transistors—from planar to nanowire structures

2. Majorana zero modes in superconductor–semiconductor heterostructures

3. Self-forming nanoscale devices

4. Synthesis of branched 'nanotrees' by controlled seeding of multiple branching events

5. Formation and electronic properties of InSb nanocrosses

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