A tunneling field-effect transistor with 25 nm metallurgical channel length
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118731
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1. Design and modeling of a new silicon-based tunneling field-effect transistor
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3. Deep-submicrometer MOS device fabrication using a photoresist-ashing technique
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