Author:
Zhang W.E.,Fu-Cheng Wang ,Yang C.H.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
6 articles.
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1. Source Material-Engineered Charge Plasma based Double Gate TFET for Analog/RF Applications;2021 International Conference on Industrial Electronics Research and Applications (ICIERA);2021-12-22
2. Controlling Ambipolarity and Rising Ion in TFETs for Enhanced Reliability: A Review;2020 5th IEEE International Conference on Recent Advances and Innovations in Engineering (ICRAIE);2020-12-01
3. New multipole method for 3-D capacitance extraction;Journal of Computer Science and Technology;2004-07
4. A Parallel 3-D Capacitance Extraction Program;Lecture Notes in Computer Science;1999
5. A tunneling field-effect transistor with 25 nm metallurgical channel length;Applied Physics Letters;1997-06-02