Channel geometry-dependent threshold voltage and transconductance degradation in gate-all-around nanosheet junctionless transistors
Author:
Affiliation:
1. Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Joellabuk-do 55324, South Korea
Funder
National Research Foundation of Korea
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0035460
Reference34 articles.
1. Junctionless versus inversion-mode lateral semiconductor nanowire transistors
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