Channel-Width-Dependent Mobility Degradation in Bulk Conduction Regime of Tri-Gate Junctionless Transistors-Reference-Cited by-同舟云学术

Channel-Width-Dependent Mobility Degradation in Bulk Conduction Regime of Tri-Gate Junctionless Transistors

Published:2022-06 Issue:6 Volume:69 Page:3037-3041
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Jeon Dae-Young¹^ORCID,Mouis Mireille²,Barraud Sylvain³^ORCID,Ghibaudo Gerard²^ORCID

Affiliation:

1. Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Seoul, Joellabuk-do, South Korea

2. University Grenoble Alpes, University Savoie Mont-Blanc, CNRS, Grenoble InP Institute of Engineering of University Grenoble Alpes, IMEP-LaHC, Grenoble, France

3. CEA-LETI Minatec, Grenoble, France

Funder

European Union 7th Framework Program project SQWIRE under grant agreements

National Research Foundation of Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9780469/09773352.pdf?arnumber=9773352

Reference31 articles.

1. Sensitivity of Threshold Voltage to Nanowire Width Variation in Junctionless Transistors

2. Effects of channel width variation on electrical characteristics of tri-gate Junctionless transistors

3. Performance of Junctionless and Inversion-Mode Thin-Film Transistors With Stacked Nanosheet Channels

4. Reliability of p-Type Pi-Gate Poly-Si Nanowire Channel Junctionless Accumulation-Mode FETs

5. Channel geometry-dependent threshold voltage and transconductance degradation in gate-all-around nanosheet junctionless transistors

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